Design of an all-GaN bidirectional DC-DC converter for medium voltage DC ship power systems using series-stacked GaN modules

Abstract

In this paper a high-voltage enhancement-mode Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT)-based module is presented for medium voltage shipboard power systems applications. Series-stacked lateral enhancement-mode GaN HEMTs with integrated quasi-active gate driver are the base for the proposed GaN module. This structure consists of passive components and just one gate driver to control all of the devices. Test results showed an acceptable synchronization of gate voltage and consequently small delay between the drain-source voltage of the two devices during switching transitions using the proposed gate controller. An application of a bi-directional boost converter, that can be used as an interface between the medium voltage and low voltage buses onboard the ship using the proposed GaN module, was demonstrated. Simulation and test results verified the idea.