Defect analysis of the LED structure deposited on the sapphire substrate

Substrates for gallium nitride epitaxy

L. Liu, James H. Edgar · Materials Science and Engineering R Reports · 2002 · 809 citations

Engineering, Materials Engineering, Materials Science +12

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, K. Nishiyama, Masaru Onishi et al. · Journal of Crystal Growth · 2000 · 414 citations

Engineering, Electrical Engineering, Materials Engineering +14

Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films

Ig-Hyeon Kim, Hyeong-Soo Park, Yong-Jo Park et al. · Applied Physics Letters · 1998 · 208 citations

Engineering, Materials Engineering, Materials Science +17

The role of threading dislocations in the physical properties of GaN and its alloys

James S. Speck · Physica B Condensed Matter · 1999 · 199 citations

Natural Sciences, Materials Engineering, Materials Science +12

The Role of Threading Dislocations in the Physical Properties of GaN and its Alloys

James S. Speck · Materials science forum · 2001 · 175 citations

Natural Sciences, Materials Engineering, Materials Science +12