IEEE Journal of Solid-State Circuits · 2000 · 25 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringMemoryMicroelectronicsSemiconductor DevicesMemory DevicesMemory Protection HardwareMemory Subsystem DesignFerroelectric Random-access MemoryMemory Circuit DesignNon-volatile Memory DesignPulse Width OptimizationRandom Access Memory (Ram)Random-access MemoryReference Voltage DesignVoltage Reference Design
A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric random access memory (FRAM) was developed. The FRAM relies on the use of a reference scheme optimally adapted to the entire cell population of an individual device. A simple voltage level detector protects the device against data loss during drops in supply voltage. Finally, a special test mode was implemented to optimize read pulse width. By using these techniques, a high-performance 1T1C 4-Mb FRAM was successfully developed.
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Highly manufacturable 1T1C 4 Mb FRAM with novel sensing scheme
Deokyoung Jung, B.G. Jeon, H.H. Kim et al. · 2003 · 18 citations