Byung-Gil Jeon

A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology

Daeyeal Lee, Ik‐Joon Chang, Sang-Yong Yoon et al. · 2012 · 49 citations

Engineering, Computer Engineering, Electrical Engineering +15

A 3.3-V, 4-Mb nonvolatile ferroelectric RAM with selectively driven double-pulsed plate read/write-back scheme

Yeonbae Chung, Byung-Gil Jeon, Kang-Deog Suh · IEEE Journal of Solid-State Circuits · 2000 · 26 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

Byung-Gil Jeon, Mun-Kyu Choi, Yoon-Jong Song et al. · IEEE Journal of Solid-State Circuits · 2000 · 25 citations

Engineering, Computer Engineering, Electrical Engineering +14

A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

Mun-Kyu Choi, Byung-Gil Jeon, Nakwon Jang et al. · IEEE Journal of Solid-State Circuits · 2002 · 16 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 1T/1C Ferrodectric RAM Using A Double-level Metal Process For Highly Scalable Nonvolatile Memory

D.K. Jung, Nam-Soo Kang, Sung‐Yung Lee et al. · Symposium on VLSI Technology · 1997 · 12 citations

Engineering, Electrical Engineering, Materials Science +15