InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

Abstract

Tunnel field-effect transistors with ability to operate well below the thermal limit (with a demonstrated 43 mV/decade at VDS = 0.1 V) are characterized in this paper. Based on 88 devices, the impact of the low subthreshold swing on the overall performance is studied. Furthermore, correlation between parameters that are important for device characterization is determined.