Applied Physics Letters · 2017 · 121 citations · 22 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials PhysicsNanotechnologyElectrode MaterialsFerroelectric CeramicsFerroelectric MaterialsQuantum TunnelingCurrent-voltage CharacterizationCurrent-voltage RelationsCurrent-voltage RelationshipDirect TunnelingElectrical Transport PropertiesFerroelectric Tunnel JunctionsPiezoresponse Force MicroscopyTunnel Junctions
The present work reports the fabrication of a ferroelectric tunnel junction based on a CMOS compatible 2.8 nm-thick Hf0.5Zr0.5O2 tunnel barrier. It presents a comprehensive study of the electronic properties of the Pt/Hf0.5Zr0.5O2/Pt system by X-ray photoelectron and UV-Visible spectroscopies. Furthermore, two different scanning probe techniques (Piezoresponse Force Microscopy and conductive-AFM) were used to demonstrate the ferroelectric behavior of the ultrathin Hf0.5Zr0.5O2 layer as well as the typical current-voltage characteristic of a ferroelectric tunnel junction device. Finally, a direct tunneling model across symmetric barriers was used to correlate electronic and electric transport properties of the ferroelectric tunnel junction system, demonstrating a large tunnel electroresistance effect with a tunneling electroresistance effect ratio of 20.
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E. A. Kraut, R. W. Grant, J. R. Waldrop et al. · Physical Review Letters · 1980 · 1.5K citations
Natural Sciences, Materials Engineering, Materials Science +17
Tunneling Across a Ferroelectric
Evgeny Y. Tsymbal, H. Kohlstedt · Science · 2006 · 886 citations · Full text
Natural Sciences, Electrical Engineering, Materials Science +8