Concepedia

Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys

Olivier Delorme, L. Cerutti, E. Tournié, Jean‐Baptiste Rodriguez

Journal of Crystal Growth · 2017 · 47 citations · 20 references

DOI

Concepts

References

20

Band gap of GaAs1−xBix, 0<x<3.6%

S. Francoeur, M. J. Seong, A. Mascarenhas et al. · Applied Physics Letters · 2003 · 427 citations

, , +17

New Semiconductor Alloy GaAs<sub>1-x</sub>Bi<sub>x</sub> Grown by Metal Organic Vapor Phase Epitaxy

Kunishige Oe, Hiroshi Okamoto · Japanese Journal of Applied Physics · 1998 · 214 citations

, , +14

Temperature Dependence of GaAs<sub>1-<i>x</i></sub>Bi<sub><i>x</i></sub>Band Gap Studied by Photoreflectance Spectroscopy

JUNICHI YOSHIDA, Takashi Kita, Osamu Wada et al. · Japanese Journal of Applied Physics · 2003 · 192 citations

, , +14

Composition dependence of photoluminescence of GaAs1−xBix alloys

Xianfeng Lu, Daniel A. Beaton, Ryan B. Lewis et al. · Applied Physics Letters · 2009 · 188 citations

, , +17

Growth of high Bi concentration GaAs<sub>1−x</sub>Bi<sub>x</sub> by molecular beam epitaxy

Ryan B. Lewis, Mostafa Masnadi‐Shirazi, T. Tiedje · Applied Physics Letters · 2012 · 154 citations

, , +15