High‐Performance 2D p‐Type Transistors Based on GaSe Layers: An Ab Initio Study

Abstract

Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerably high ON-current. Such device characteristics are due to the valence band edge shape, which leads to very heavy holes in the transport direction and eventually suppresses intraband tunneling, detrimental for correct operation in the OFF state. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.