Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs - Concepedia

Concepedia

Publication | Open Access

Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs

DOI Full Paper Access

14

Citations

8

References

2016

Year

Alexander Pooth, Johan Bergsten, Niklas Rorsman, H. Hirshy, R. M. Perks, P.J. Tasker, Trevor Martin, Richard F. Webster, D. Cherns, Michael J. Uren,

Microelectronics Reliability

Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsElectrical ComparisonApplied PhysicsAluminum Gallium NitrideGan Power DeviceAlgan/gan-on-sic HfetsOhmic ContactsMicroelectronicsCategoryiii-v Semiconductor

References

	Year	Citations

Page 1

Page 1