Two-dimensional transient enhanced diffusion and its impact on bipolar transistors

Abstract

The impact of transient-enhanced diffusion (TED) and oxidation-enhanced diffusion (OED) on the device performance of advanced Si devices has long been recognized. The short-channel behaviour of MOSFET's is for instance known to be affected. Experimental studies of TED have almost exclusively been restricted to one-dimensional cases, but a full two-dimensional analysis of TED is mandatory to evaluate its impact on device performance. In this paper we present a detailed experimental study of 2D TED for low-dose and high-dose implantations. Furthermore, for the first time the impact of 2D TED due to the external base implantations on the electrical behaviour of single-poly bipolar transistors in a BiCMOS process has been analyzed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>