A full-band Monte Carlo model for silicon nanoscale devices with a quantum mechanical correction of the potential

Abstract

A new transport model for Si nanoscale devices is presented which consistently integrates a quantum mechanical correction of the potential into a full-band Monte Carlo model. This extends the framework of semiclassical particle simulations to the quantitative description of quantum mechanical effects. The model is applied to investigate quantum mechanical corrections to the drain induced barrier lowering typical for nanoscale MOSFETs. Our simulations show that the barrier lowering is enhanced in these devices.