Electronics Letters · 1995 · 14 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser PhysicsOptical SourcesSemiconductor Device MaterialsSemiconductor LasersSemiconductor SurfacesCurrent DensityHeterostructure LasersLaser Gain MaterialsLaser ThresholdLow-threshold Current LasersThermal Management In Semiconductor LasersThermal ResistanceThreshold Current Reduction
An Si/Al2O3 mirror has been introduced into the p-side mirror of a 1.3 µm GaInAsP/InP square buried heterostructure (SBH) surface emitting (SE) laser to decrease thermal resistance. The low threshold pulsed oscillation (threshold current Ith = 12 mA) has been obtained for an 8 × 8 µm device at room temperature. Its threshold current density was ~18 kA/cm2. Near room temperature (13°C) CW oscillation for another chip has also been realised.
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GaInAsP/InP Surface Emitting Injection Lasers
H. Soda, Kenichi Iga, Chiyuki Kitahara et al. · Japanese Journal of Applied Physics · 1979 · 544 citations
Low threshold, wafer fused long wavelength vertical cavity lasers
J.J. Dudley, D.I. Babic, Richard P. Mirin et al. · Applied Physics Letters · 1994 · 118 citations