Charge controlled 80 volt lateral DMOSFET with very low specific on-resistance designed for an integrated power process

Abstract

The development of a lateral power device with low specific on-resistance which can be merged with control devices for use in power integrated circuits is described. The device uses charge control principles which effect a double RESURF action. The device was designed for a breakdown in excess of 80 V and a specific on-resistance of less than 2.0 m Omega -cm/sup 2/. Experimental results corroborate the design simulation. Device breakdown of 80 V was observed with a specific on-resistance of 1.8 m Omega -cm/sup 2/.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>