Electrical characterization of textured interpoly capacitors for advanced stacked DRAMs

Abstract

The authors present and discuss the C-V, I-V and TDDB (time-dependent dielectric breakdown) characteristics of textured interpoly capacitors fabricated with different process conditions. It is concluded that the combination of a rough storage electrode with a dielectric that has a bulk-limited conduction offers a considerable increase in capacitance while improving device reliability. Textured stacked capacitors (TSTCs) are proposed for the manufacture of 64-Mb DRAMs. Compared to other advanced stacked capacitor concepts, the approach drastically reduces process complexity and topography.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>