Nano Letters · 2016 · 16 citations · 31 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsNanotechnologySemiconductor MaterialsNanomechanical PropertiesNanomechanicsNanowiresSemiconductor NanomaterialsSemiconductor PhysicsTransmission Electron MicroscopyCharge TransportElectron Mobility In NanowiresElectronic TransportPiezoresistive MaterialsSemiconductor NanowiresSpace-charge-limited CurrentStrain Effects On Electronic PropertiesTensile Strain
The electromechanical properties of ternary InAsP nanowires (NWs) were investigated by applying a uniaxial tensile strain in a transmission electron microscope (TEM). The electromechanical properties in our examined InAsP NWs were governed by the piezoresistive effect. We found that the electronic transport of the InAsP NWs is dominated by space-charge-limited transport, with a I ∞ V 2 relation. Upon increasing the tensile strain, the electrical current in the NWs increases linearly, and the piezoresistance gradually decreases nonlinearly. By analyzing the space-charge-limited I–V curves, we show that the electromechanical response is due to a mobility that increases with strain. Finally, we use dynamical measurements to establish an upper limit on the time scale for the electromechanical response.
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From molecules to solids with the DMol3 approach
B. Delley · The Journal of Chemical Physics · 2000 · 10.9K citations · Full text
Natural Sciences, Chemistry, Physics +12
Review: Semiconductor Piezoresistance for Microsystems
A.A. Barlian, Woo‐Tae Park, Joseph R. Mallon et al. · Proceedings of the IEEE · 2009 · 932 citations · Full text
Charge Accumulation at InAs Surfaces
Louise Olsson, C. B. M. Andersson, M.C. Håkansson et al. · Physical Review Letters · 1996 · 296 citations
Natural Sciences, Materials Engineering, Materials Science +17