Applied Physics Letters · 2016 · 25 citations · 21 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsMetal OxidesMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Device MaterialsThin-film DepositionThin-film TransistorsAmorphous Phase ContentCurrentsOxide Thin-film TransistorsPrinted Thin-film TransistorsSaturationThin Oxide FilmsThin Oxide LayersZinc Oxides
In the last two decades, metal-oxides, like zinc tin oxide (ZTO), are widely studied semiconductors for transistor applications. This study presents a simple, non-toxic, stable, and cost efficient precursor route for ZTO deposition by ink-jet printing. Such fabricated thin films are composed of an amorphous phase with embedded ZnO nanocrystals. The saturation mobility of ink-jet printed transistors increases from 0.05 cm2 V−1 s−1 for a single semiconducting layer to 7.8 cm2 V−1 s−1 for a transistor composed of 8 layers. This constitutes the highest saturation mobility of an ink-jet printed ZTO transistor reported so far. The devices exhibit large output currents (up to 38.7 mA) and high on/off ratios (exceeding 108). The large improvement in transistor performance with the number of layers is ascribed to an improved degree of substrate coverage confirmed by AFM investigations.
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Inkjet Printing—Process and Its Applications
Madhusudan Singh, Hanna M. Haverinen, Parul Dhagat et al. · Advanced Materials · 2009 · 2.3K citations
Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO
Parmanand Sharma, Amita Gupta, K. V. Rao et al. · Nature Materials · 2003 · 1.8K citations