Materials science forum · 2016 · 19 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySemiconductor MaterialsThin FilmsChemical Vapor DepositionDopingEpitaxial GrowthOptical Thin FilmsSemiconductor PhysicsThin Film Optical PropertiesDeposition RateDeposition Rate EffectsDoping In Thin FilmsEpitaxial Film GrowthEpitaxial MaterialsOptical PropertiesP-type DopingSubstrate Orientation Effects
Exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3C‑SiC films grown by chemical vapor deposition (CVD) was performed. The influence of polytype and substrate orientation was verified. Role of principal process conditions (growth temperature and pressure, deposition rate, chemical environment) was investigated in details. Finally, the evolution of optical properties of resulting SiC films with Al content was examined.