Hervé Peyre

Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

Marcin Zieliński, Marc Portail, Thierry Chassagne et al. · Journal of Crystal Growth · 2008 · 49 citations

Natural Sciences, Materials Engineering, Materials Science +15

Thermal stability of InGaAs/InGaAsP quantum wells

Hervé Peyre, F. Alsina, J. Camassel et al. · Journal of Applied Physics · 1993 · 32 citations

Engineering, Materials Science, Physics +17

Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"

Thierry Chassagne, A. Leycuras, Carole Balloud et al. · Materials science forum · 2004 · 31 citations · Full text

Engineering, Materials Engineering, Materials Science +11

Electrical transport properties of p-type 4H-SiC

Sylvie Contreras, L. Kończewicz, Roxana Arvinte et al. · physica status solidi (a) · 2016 · 31 citations

Natural Sciences, Materials Science, Physics +17

Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si

Gabriel Ferro, J. Camassel, Sandrine Juillaguet et al. · Semiconductor Science and Technology · 2003 · 28 citations

Engineering, Materials Engineering, Materials Science +16