Hervé Peyre - Concepedia

Author

Hervé Peyre

Université de Montpellier ORCID

Also Known As

E Hervé Peyre, H Peyre, H. PEYRE, H. Peyre, Herve Peyre, Hervé Peyre, Hervé Peyré, Peyre H, Peyre, H., Peyre, Herve

Publications

455

Citations

H-Index

Concepts

All Affiliations

Université de Montpellier Centre National de la Recherche Scientifique Laboratoire Charles Coulomb Université Claude Bernard Lyon 1 Laboratoire des Multimatériaux et Interfaces

About

Hervé Peyre is an author at Université de Montpellier specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	14	292
2	Applied Physics	11	14	292
3	Electrical Engineering	3	3	55
4	Chemical Engineering	2	2	40
5	Chemistry	1	1	28

Hervé Peyre

Publications

302

Citations

H-Index

Page 1

	Year	Citations
Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor Marcin Zieliński, Marc Portail, Thierry Chassagne, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringApplied Physics3C-sic Thin Films	2008	49
Thermal stability of InGaAs/InGaAsP quantum wells Hervé Peyre, F. Alsina, J. Camassel, Journal of Applied Physics SemiconductorsOptical MaterialsEngineeringPhotoluminescencePhysics	1993	32
Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls" Thierry Chassagne, A. Leycuras, Carole Balloud, Materials science forum Resistively-heated Lp-cvd ReactorEngineeringApplied PhysicsHeat TransferChemical Vapor Deposition	2004	31
Electrical transport properties of p-type 4H-SiC Sylvie Contreras, L. Kończewicz, Roxana Arvinte, physica status solidi (a) SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	2016	29
Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si Gabriel Ferro, J. Camassel, Sandrine Juillaguet, Semiconductor Science and Technology Materials EngineeringMaterials ScienceChemical EngineeringHigh Temperature MaterialsEngineering	2003	28
p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum Marcin Zieliński, Roxana Arvinte, Thierry Chassagne, Materials science forum Materials ScienceP-type DopingMaterials EngineeringSemiconductor TechnologyEngineering	2016	19
Control of 3C–SiC/Si wafer bending by the “checker‐board” carbonization method Thierry Chassagne, Gabriel Ferro, H. Haas, physica status solidi (a) Materials ScienceWafer Scale ProcessingEngineeringWafer BendingCrystalline Defects	2005	18
Modeling the infrared reflectance of n–/n+ SiC layers on top of n+ SiC substrates for epitaxy control application Jean Camassel, Julien Pernot, H. Y. Wang, physica status solidi (a) Optical MaterialsEngineeringOptoelectronic DevicesInfrared ReflectanceSemiconductor Device	2003	15
Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition Kassem Alassaad, Véronique Soulière, François Cauwet, Acta Materialia Materials EngineeringMaterials ScienceEngineeringApplied PhysicsGe Incorporation	2014	15
Combined effects of Ga, N, and Al codoping in solution grown 3C–SiC Jianwu Sun, Georgios Zoulis, Jean Lorenzzi, Journal of Applied Physics Materials EngineeringSemiconductorsMaterials ScienceGa-doped 3C–sicEngineering	2010	13

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