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Growth of SrTiO[sub 3] and BaTiO[sub 3] Thin Films by Atomic Layer Deposition
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1999
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Materials ScienceEngineeringBarium PrecursorsOxide ElectronicsSurface ScienceApplied PhysicsBarium BisThin Film Process TechnologyChemistryThin FilmsChemical DepositionEpitaxial GrowthChemical Vapor DepositionAtomic Layer DepositionElectrochemistryThin Film ProcessingElectrochemical Surface Science
and thin films were deposited by atomic layer deposition making use of a novel class of strontium and barium precursors, i.e., their cyclopentadienyl compounds, together with titanium tetraisopropoxide and water. films were grown at from strontium bis(triisopropylcyclopentadienyl) and at from barium bis(pentamethylcyclopentadienyl). After annealing in air at , permittivities of 180 and 165 were measured for and , respectively. The films showed excellent conformality and complete filling of test trench structures. ©1999 The Electrochemical Society