Epitaxy Of GaAs on Si: MBE and OMCVD

Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD

Masahiro Akiyama, Yoshihiro Kawarada, Katsuzo Kaminishi · Japanese Journal of Applied Physics · 1984 · 363 citations

Engineering, Electrical Engineering, Materials Science +17

Chemical beam epitaxy of InP and GaAs

W. T. Tsang · Applied Physics Letters · 1984 · 255 citations

Engineering, Materials Engineering, Materials Science +17

Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

W. I. Wang · Applied Physics Letters · 1984 · 249 citations

Engineering, Materials Engineering, Materials Science +17

Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates

J. W. Lee, H. Shichijo, Hai-Lung Tsai et al. · Applied Physics Letters · 1987 · 225 citations

Engineering, Materials Engineering, Materials Science +17

Dislocation reduction in epitaxial GaAs on Si(100)

R. Fischer, D. Neuman, H. Zabel et al. · Applied Physics Letters · 1986 · 198 citations

Engineering, Materials Engineering, Materials Science +17