Low Temperature Growth of High Purity, Low Resistivity Copper Films by Atomic Layer Deposition

Abstract

The atomic layer deposition of copper metal thin films was achieved using a three precursor sequence entailing Cu(OCHMeCH2NMe2)2, formic acid, and hydrazine. A constant growth rate of 0.47−0.50 Å/cycle was observed at growth temperatures between 100 and 170 °C. The resulting films are high purity and have low resistivities.