Early Voltage Behavior in Circular Gate SOI nMOSFET Using 0.13 μm Partially-Depleted SOI CMOS Technology

Abstract

This paper studies the Early voltage behavior in circular gate partiallydepleted SOI nMOSFET. The drain/source asymmetric effects are considered in terms of drain current as a function of the gate and drain voltages. Drain current comparisons with rectangular gate partiallydepleted SOI nMOSFET are performed, regarding the same effective channel length and width. Experimental results and three- dimensional simulations are used to qualify the results.