Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing

Abstract

Selective p-type doping of Si-doped GaN by Mg ion implantation and multicycle rapid thermal annealing (MRTA) is demonstrated. Samples of GaN were capped by AlN and annealed in N2 overpressure at temperatures up to 1330°C. MRTA resulted in a lower resistivity films, compared to a conventionally-annealed reference sample. Mg acceptor activation for the MRTA annealed sample was calculated using a two-layer corrected Hall method to be about 1% at room temperature. Low temperature photoluminescence revealed donor-acceptor bound electron-hole pair recombination near 3.2 eV, indicating activation of Mg upon MRTA annealing.