Jordan D. Greenlee - Concepedia

Author

Jordan D. Greenlee

United States Naval Research Laboratory ORCID

Also Known As

J. D. Greenlee, Jordan D. Greenlee, Jordan D Greenlee, Jordan D. Greenlee, Jordan Greenlee

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory Georgia Institute of Technology National Academies of Sciences, Engineering, and Medicine National Health Council University of Maryland, College Park

About

Jordan D. Greenlee is an author at United States Naval Research Laboratory specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	29	1.1K
2	Applied Physics	19	28	968
3	Chemistry	6	6	260
4	Natural Sciences	3	3	96
5	Chemical Engineering	2	2	59

Jordan D. Greenlee

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates Marko J. Tadjer, Michael A. Mastro, Nadeemullah A. Mahadik, Journal of Electronic Materials Materials EngineeringMaterials ScienceOptical MaterialsEngineeringSapphire Substrates	2016	127
Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation Travis J. Anderson, Andrew D. Koehler, Jordan D. Greenlee, IEEE Electron Device Letters Wide-bandgap SemiconductorEngineering2-Mev Proton IrradiationSemiconductorsSemiconductor Technology	2014	88
Editors' Choice—On the Radiation Tolerance of AlGaN/GaN HEMTs B. D. Weaver, Travis J. Anderson, Andrew D. Koehler, ECS Journal of Solid State Science and Technology Wide-bandgap SemiconductorElectrical EngineeringDislocation DensityEngineeringPhysics	2016	78
Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates Travis J. Anderson, Marko J. Tadjer, Jennifer K. Hite, IEEE Electron Device Letters Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2015	71
Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN Jordan D. Greenlee, Boris N. Feigelson, Travis J. Anderson, ECS Journal of Solid State Science and Technology Materials ScienceSmrta TechniqueElectrical EngineeringWide-bandgap SemiconductorImplanted Dopants	2015	61
Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing Marko J. Tadjer, Boris N. Feigelson, Jordan D. Greenlee, ECS Journal of Solid State Science and Technology Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2015	53
Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties Jordan D. Greenlee, Boris N. Feigelson, Travis J. Anderson, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorStructural PropertiesHigh Temperature MaterialsMg-implanted Gan	2014	48
Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs Andrew D. Koehler, Travis J. Anderson, Marko J. Tadjer, IEEE Electron Device Letters Wide-bandgap SemiconductorEngineeringNuclear PhysicsRadiation ToleranceDynamic On-resistance	2016	45
Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs Jordan D. Greenlee, Petra Specht, Travis J. Anderson, Applied Physics Letters Materials EngineeringAluminium NitrideElectrical EngineeringWide-bandgap SemiconductorAl Broadening	2015	43
Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, ECS Journal of Solid State Science and Technology Electroluminescence ImagingWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2016	43

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