Electronics Letters · 1996 · 74 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesDevice CharacterizationHigh-frequency Semiconductor DevicesLaser DiodesSemiconductor Device MaterialsSemiconductor LasersWide Band Gap SemiconductorsDoped Carbon MaterialsEquivalent Series ResistanceFacet CoatingsHigh-power Semiconductor LasersSemiconductor Laser DiodesSemiconductor Laser FabricationSeries ResistanceWaveguide Lasers
0.98 µm-emitting, broad-waveguide-type InGaAs/InGaP/GaAs diode lasers have been optimised for maximum wallplug efficiency. Optimised-facet-coated, 100 µm-widestripe, 500 µm-long devices having InGaAsP optical-waveguide thicknesses of 0.6 and 1.2 µm provide maximum wallplug efficiencies of 66% and 62%, respectively. Carbon-doped cap layers allow for a series resistance of 0.08 Ω for devices with 100 × 500 µm2 contact area.
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High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers
D. Z. Garbuzov, N.Y. Antonishkis, A. D. Bondarev et al. · IEEE Journal of Quantum Electronics · 1991 · 155 citations
GaInP mass transport and GaInP/GaAs buried-heterostructure lasers
S. H. Groves, Z. L. Liau, S. C. Palmateer et al. · Applied Physics Letters · 1990 · 32 citations