Investigation and Fabrication of the Semiconductor Devices Based on Metamorphic InAlAs/InGaAs/InAlAs Nanoheterostructures for THz Applications

Abstract

A metamorphic high electron mobility transistor (MHEMT) with “zig–zag” –like gate of a length of 46 nm and cut-off frequencies for the current and power gain [Formula: see text] THz and [Formula: see text] THz respectively was fabricated on the base of InAlAs/InGaAs/InAlAs nanoheterostructure.