P. P. Maltsev

Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

A. Yu. Pavlov, K. N. Tomosh, R. R. Galiev et al. · Semiconductors · 2016 · 21 citations

Engineering, Electrical Engineering, Physics +16

MHEMT with a power-gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure

D. V. Lavrukhin, A. E. Yachmenev, R. R. Galiev et al. · Semiconductors · 2014 · 20 citations

Engineering, Electrical Engineering, Materials Science +14

Double injection, resonant-tunneling recombination, and current-voltage characteristics in double-graphene-layer structures

M. Ryzhii, V. Ryzhii, Taiichi Otsuji et al. · Journal of Applied Physics · 2014 · 20 citations · Full text

Natural Sciences, Materials Science, Physics +17

Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

A. E. Yachmenev, P. P. Maltsev, Igor Ilyakov et al. · Semiconductors · 2017 · 18 citations

Engineering, Materials Science, Physics +16

Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In x Ga1 − x As quantum well with InAs inserts

V. A. Kulbachinskiı̆, L. N. Oveshnikov, R. A. Lunin et al. · Semiconductors · 2015 · 17 citations

Natural Sciences, Materials Science, Physics +16