Concepedia

A G-Band High Power Frequency Doubler in Transferred-Substrate InP HBT Technology

Maruf Hossain, Ksenia Nosaeva, B. Janke, Nils Weimann, Viktor Krozer, W. Heinrich

IEEE Microwave and Wireless Components Letters · 2015 · 16 citations · 7 references

DOI

Concepts

Abstract

This letter presents a G-band balanced frequency doubler with high output power, realized using a 800 nm transferred-substrate InP-HBT process. The doubler delivers 5 dBm ±3 dBm in the range 140-220 GHz. The dc consumption is only 41 mW. To the knowledge of the authors, this is the highest output power for a wideband transistor based frequency doubler in the 140-220 GHz frequency range published so far. The results show the ability to implement a high output power G-band source in transferred-substrate InP HBT technology.

References

7

Active 220- and 325-GHz Frequency Multiplier Chains in an SiGe HBT Technology

E. Öjefors, B. Heinemann, Ullrich R. Pfeiffer · IEEE Transactions on Microwave Theory and Techniques · 2011 · 170 citations

, , +16

$W$-Band Amplifiers With 6-dB Noise Figure and Milliwatt-Level 170–200-GHz Doublers in 45-nm CMOS

Berke Çetinöneri, Yusuf A. Atesal, A. Fung et al. · IEEE Transactions on Microwave Theory and Techniques · 2011 · 127 citations

, , +16

A 200-245 GHz Balanced Frequency Doubler with Peak Output Power of +2 dBm

Hsin-Chang Lin, Gabriel M. Rebeiz · 2013 · 37 citations

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A 135–160 GHz balanced frequency doubler in 45 nm CMOS with 3.5 dBm peak power

Hsin-Chang Lin, Gabriel M. Rebeiz · 2014 · 36 citations · Full text

, , +16

An ultra-wideband D-Band signal source chip using a fundamental VCO with frequency doubler in a SiGe bipolar technology

Christian Bredendiek, Nils Pohl, Klaus Aufinger et al. · 2012 · 30 citations

, , +16