Concepedia

Controlling the compositional inhomogeneities in AlxGa1−xN/AlyGa1−yN MQWs grown by PA-MBE: Effect on luminescence properties

Pallabi Pramanik, Sayantani Sen, Chirantan Singha, Abhra Roy, Alakananda Das, Susanta Sen, Anirban Bhattacharyya, Deepak Kumar, D.V. Sridhara Rao

Journal of Crystal Growth · 2016 · 17 citations · 23 references

DOI

Concepts

References

23

Advances in group III-nitride-based deep UV light-emitting diode technology

Michael Kneissl, Tim Kolbe, C.L. Chua et al. · Semiconductor Science and Technology · 2010 · 673 citations

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Adatom Kinetics On and Below the Surface: The Existence of a New Diffusion Channel

Jörg Neugebauer, Tosja Zywietz, Matthias Scheffler et al. · Physical Review Letters · 2003 · 329 citations

, , +17

Growth of GaN by ECR-assisted MBE

T. D. Moustakas, Ting Lei, R. J. Molnar · Physica B Condensed Matter · 1993 · 236 citations · Full text

, , +17

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

P. Kandaswamy, F. Guillot, E. Bellet‐Amalric et al. · Journal of Applied Physics · 2008 · 194 citations

, , +17

Improved quality GaN grown by molecular beam epitaxy using In as a surfactant

F. Widmann, B. Daudin, G. Feuillet et al. · Applied Physics Letters · 1998 · 159 citations

, , +17