In _0.53 Ga _0.47 As/AlAs resonant tunnellingdiodes withswitching time of 1.5 ps

Abstract

Switching times of 1.5 ps for In0.53Ga0.47As/AlAs resonant tunnelling diodes (RTDs) with 1.1 nm wide barriers and a peak current density of 6.8 × 105 A/cm2 are reported. To the authors' knowledge, this is the fastest switching ever reported for any type of RTD. The authors confirm that the obtained switching time is close to the value calculated from the experimentally derived depletion-layer capacitance and average negative differential resistance.