Inhomogeneous nitrogen incorporation effects on the transport properties of GaAsN grown by CBE

Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

M. Weyers, Michio Sato, Hiroaki Ando · Japanese Journal of Applied Physics · 1992 · 767 citations

Materials Science, Ii-vi Semiconductor, Optical Materials +13

InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

S. R. Kurtz, Andrew A. Allerman, E. D. Jones et al. · Applied Physics Letters · 1999 · 537 citations · Full text

Wide-bandgap Semiconductor, Engineering, Photovoltaic Devices +18

Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x

C. Skierbiszewski, P. Perlin, P. Wiśniewski et al. · Applied Physics Letters · 2000 · 247 citations

Semiconductors, Semiconductor Technology, Wide-bandgap Semiconductor +13

The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs

H. Künzel, K. Ploog · Applied Physics Letters · 1980 · 224 citations

Ii-vi Semiconductor, Photonics, Photoluminescence +13

Dependence of the Peak Energy of the Pair-Photoluminescence Band on Excitation Intensity

Eliam Zacks, A. Halperin · Physical review. B, Solid state · 1972 · 184 citations

Engineering, Excitation Energy Transfer, Chemistry +19