9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 µm

A. Martinez, J.‐G. Provost, B. Dagens, Vincent Sallet, D. Jahan, K. Merghem, L. Ferlazzo, J. Landreau, O. Le Gouézigou, Jean‐Christophe Harmand,

Electronics Letters · 2004 · 10 citations · 9 references

Concepts

Abstract

High frequency characterisation of three-quantum well GaInNAs/GaAs lasers operating at 1.35 µm is reported. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are demonstrated, indicating the potential for high bit rate (10 Gbit/s) direct modulation of these dilute nitrides on GaAs devices.

References

9