Electronics Letters · 2004 · 10 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptoelectronic DevicesQuantum WellsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsDirect ModulationHeterostructure LasersQuantum Well GainQuantum Well HeterostructuresQuantum Well Laser DiodesQuantum Well LasersQuantum Well StructuresSemiconductor Laser Diodes
High frequency characterisation of three-quantum well GaInNAs/GaAs lasers operating at 1.35 µm is reported. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are demonstrated, indicating the potential for high bit rate (10 Gbit/s) direct modulation of these dilute nitrides on GaAs devices.
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Low-threshold CW GaInNAsSb/GaAs laser at 1.49 µm
Seth R. Bank, Mark A. Wistey, H. B. Yuen et al. · Electronics Letters · 2003 · 58 citations
1.5 µm laser on GaAs with GaInNAsSb quinary quantum well
Lianhe Li, Vincent Sallet, G. Patriarche et al. · Electronics Letters · 2003 · 34 citations