IEEE Photonics Technology Letters · 1992 · 100 citations · 9 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringOptoelectronicsDevice CharacterizationLaser DiodesLaser PhysicsMicrowave MeasurementsMicrowave Semiconductor DevicesSemiconductor LasersResonanceResonance CharacterizationSemiconductor Laser DiodesTest Equipment Calibration
The authors describe a new technique for extracting the intrinsic laser-diode dynamic properties accurately. This simple technique eliminates the need for accurate microwave calibration of the test equipment and problems of microwave reflections, nonideal frequency response of laser mount, and detector. The effect of the parasitic components of the laser diode are also eliminated from the results so that measurements of important dynamic properties of the laser can be found up to high frequencies (10-20 GHz) on standard laser diodes. The techinque being used to measure variations of resonance peak and damping factor at different bias levels for a standard bulk active region 1.3 mu m laser diode is shown.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
9
High-speed modulation of semiconductor lasers
R.S. Tucker · Journal of Lightwave Technology · 1985 · 399 citations
Effects of carrier transport on high-speed quantum well lasers
Radhakrishnan Nagarajan, Toru Fukushima, S. Corzine et al. · Applied Physics Letters · 1991 · 183 citations
High speed semiconductor laser design and performance
John E. Bowers · Solid-State Electronics · 1987 · 159 citations