Improved performance of ITO/TiO 2 /HfO 2 /Pt random resistive accessory memory by nitrogen annealing treatment

The missing memristor found

Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart et al. · Nature · 2008 · 11.5K citations

Engineering, Electrical Engineering, Electronic Materials +5

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

Yuchao Yang, Feng Pan, Qi Liu et al. · Nano Letters · 2009 · 873 citations

Natural Sciences, Materials Engineering, Materials Science +17

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

Hsuan‐Yu Lee, P. S. Chen, Tong Wu et al. · 2008 · 623 citations

Engineering, Electrical Engineering, Materials Science +14

Ultrafast Synaptic Events in a Chalcogenide Memristor

Yi Li, Yingpeng Zhong, Lei Xu et al. · Scientific Reports · 2013 · 419 citations · Full text

Life Sciences, Electrical Engineering, Materials Science +17

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

Shimeng Yu, Ximeng Guan, H.‐S. Philip Wong · Applied Physics Letters · 2011 · 402 citations

Engineering, Electrical Engineering, Materials Science +17