Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 15 citations · 16 references
EngineeringElectrical EngineeringPhysicsCondensed Matter PhysicsMicroelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesNanoelectronicsSemiconductor PhysicsTerahertz PhotonicsTerahertz SpectroscopyWide Band Gap SemiconductorsElectron Plasma WavesEmission SpectraGan-based High-frequency DevicesTerahertz DetectionTerahertz DetectorsTerahertz NanoelectronicsTerahertz Semiconductor DevicesTerahertz Waves
Abstract In this work we present experimental results on room temperature terahertz (THz) detection/emission from nanotransistors as well as double grating gates structures. It shows that the emission spectra from GaN/AlGaN HEMT transistor can be successfully interpreted in the frame of the Dyakonov‐Shur model which predicts that by heating/accelerating the electrons up to velocities comparable with plasma wave velocity can lead to instability and generation of plasma waves in the transistor channel. Studies of the current dependence of THz detection by InGaAs based HEMT is also presented. It is shown that in realistic transistor structures the room temperature resonant THz detection can be observed only upon applying a current high enough to produce fast/hot electrons. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
W. Knap, J. Lusakowski, T. Parenty et al. · Applied Physics Letters · 2004 · 347 citations