T. Parenty

Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

W. Knap, J. Lusakowski, T. Parenty et al. · Applied Physics Letters · 2004 · 346 citations

Thz Photonics, Terahertz Technology, Engineering +22

Design Optimization of AlInAs–GaInAs HEMTs for High-Frequency Applications

J. Mateos-Lopez, T. González, D. Pardo et al. · IEEE Transactions on Electron Devices · 2004 · 35 citations

Device Modeling, Monte Carlo Model, Electrical Engineering +12

Design Optimization of AlInAs–GaInAs HEMTs for Low-Noise Applications

J. Mateos, T. González, D. Pardo et al. · IEEE Transactions on Electron Devices · 2004 · 22 citations

Low-noise Performance, Electrical Engineering, Engineering +11

<b> <i>f</i> </b> _max of 490 GHz metamorphic In _0.52 Al _0.48 As/In _0.53 Ga _0.47 As HEMTs on GaAs substrate

S. Bollaert, Y. Cordier, M. Zaknoune et al. · Electronics Letters · 2002 · 16 citations

Design and realization of sub 100 nm gate length HEMTs

T. Parenty, S. Bollaert, J. Mateos et al. · 2002 · 15 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gate Length +14