IEEE Electron Device Letters · 2004 · 15 citations · 6 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsBreakdown VoltageBreakdown Voltage OptimizationDeep EtchingEtchingTermination SchemesTermination Techniques
A new junction termination method employing shallow trenches filled with oxide, which successfully decreased the junction termination area, is proposed and fabricated without any complicated process such as Si-deep etching. Shallow trenches between the floating field limiting rings successfully redistributed the single electric field peak into two peaks so that the breakdown voltage could be increased with the same junction termination area. The experimental results show that the proposed method decreased the junction termination area by more than 25% compared to a conventional field limiting ring structure when breakdown voltages are equal.
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