HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide

Abstract

The authors have fabricated low-temperature fully silicided YbSi/sub 2-x/-gated n-MOSFETs that used an HfAlON gate dielectric with a 1.7-nm EOT. After a 600 /spl deg/C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm/sup 2//V/spl middot/s. They have additional merit of a process compatible with current very large scale integration fabrication lines.