2003 · 24 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave OscillatorsNoiseNoise In Semiconductor DevicesOscillatorsRadio-frequency Integrated CircuitsGaas OscillatorsHeterojunction Bipolar TransistorsLow-noise DesignLow-phase-noise OscillatorsNoise In High-frequency Semiconductor DevicesOscillator DevicesPower OutputTransistor Noise
Design considerations, fabrication and performance results are described for a low-phase-noise Ku-band oscillator implemented using a fully self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT). The transistor has a measured collector-current 1/f noise power density of 10/sup -19/A/sup 2//Hz at f=400 Hz for a collector current of 1.2 mA. The free-running oscillator developed represents an output power of 6 dBm at 15.5 GHz, with a single-sideband (SSB) FM noise of -65 dBc/Hz at 10 kHz off-carrier. The noise level is 24 dB lower than that for a GaAs FET oscillator, and 2 dB lower than that for a silicon voltage-controlled oscillator.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Near-Carrier Noise in FET Oscillators
R.A. Pucel, Jamie Curtis · 2005 · 37 citations
Engineering, Electrical Engineering, Electronic Materials +16