Publication | Closed Access
A new approach for modeling of current degradation in hot-electron damaged LDD NMOSFETs
11
Citations
10
References
1995
Year
Device ModelingElectrical EngineeringEngineeringNanoelectronicsStress-induced Leakage CurrentBias Temperature InstabilityApplied PhysicsDrain Current DegradationTime-dependent Dielectric BreakdownSingle Event EffectsNew ApproachCircuit ReliabilityDevice ReliabilityMicroelectronicsLdd NmosfetsCurrent DegradationSemiconductor Device
An analytical model describing current degradation in hot-electron damaged LDD NMOSFETS is proposed. The basic idea of the model is that the drain current degradation can be explained in terms of an increase in the parasitic resistance only. Good agreement with measured data over at least three decades of stress time is obtained with our model.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
| Year | Citations | |
|---|---|---|
Page 1
Page 1