Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma

Abstract

High-quality silicon oxide (SiO2) thin films are deposited by plasma-enhanced atomic layer deposition (PEALD) using bis(diethylamino)silane as a Si precursor and ammonia/oxygen plasmas at a substrate temperature of 150°C. The SiO2 films are formed at a growth rate of ∼0.137 nm/cycle in high purity. The overall quality of the PEALD-SiO2 films are assessed by infrared spectroscopy, wet etch rate in 0.5% hydrofluoric solution, Auger electron spectroscopy, and current-voltage analysis. The quality of the films formed at low temperature using the combination of ammonia/oxygen plasmas compares well with deposition at higher temperatures (350°C) using oxygen plasma only.