RC-TCIGBT: A Reverse Conducting Trench Clustered

Abstract

A new, three terminal, reverse conducting trench clustered IGBT (RC-TCIGBT) is proposed and evaluated using numerical simulations in 1200 V, non-punch through (NPT) technology. This device is a monolithic integration of an anti- parallel thyristor (APT) in the TCIGBT (O. Spulber, et. al., December 2000), (K. Vershinin, et. al., June 2006). This approach does not increase device area and ensures snap-back free operation in the first (I <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">st</sup> ) and third (III <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> ) quadrants. Moreover, it is shown that the RC-TCIGBT which belongs to the class of MOS bipolar devices with controlled thyristor action, can provide excellent Vce (sat)/Eoff trade-off and soft reverse recovery.