Growth and characterization of GaN by atomsphere pressure metalorganic chemical-vapor deposition with a novel separate-flow reactor

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.5K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

GaN Growth Using GaN Buffer Layer

Shuji Nakamura Shuji Nakamura · Japanese Journal of Applied Physics · 1991 · 1.3K citations

Engineering, Electrical Engineering, Materials Science +15

High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Journal of Applied Physics · 1994 · 429 citations

Engineering, Materials Engineering, Materials Science +17

Novel metalorganic chemical vapor deposition system for GaN growth

Shuji Nakamura, Yasuhiro Harada, Masayuki Seno · Applied Physics Letters · 1991 · 365 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1994 · 354 citations

Engineering, Electrical Engineering, Materials Science +17