IEEE Electron Device Letters · 1992 · 86 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignBipolar Junction TransistorsDevice CharacterizationDevice ModelingField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsGate LeakageGate Leakage CurrentGate Oxide LeakageGate-induced Drain LeakageLeakageLeakage CurrentLeakage Current Analysis
An off-state leakage current unique for short-channel SOI MOSFETs is reported. This off-state leakage is the amplification of gate-induced-drain-leakage current by the lateral bipolar transistor in an SOI device due to the floating body. The leakage current can be enhanced by as much as 100 times for 1/4 mu m SOI devices. This can pose severe constraints in future 0.1 mu m SOI device design. A novel technique was developed based on this mechanism to measure the lateral bipolar transistor current gain beta of SOI devices without using a body contact.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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The Physics of Semiconductor Devices
Andrew Grant · Physics Bulletin · 1978 · 795 citations
The impact of gate-induced drain leakage current on MOSFET scaling
Subbreakdown drain leakage current in MOSFET
J. Chen, T.Y. Chan, I.C. Chen et al. · IEEE Electron Device Letters · 1987 · 301 citations