IEEE Transactions on Electron Devices · 1983 · 56 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingHigh-frequency Semiconductor DevicesMicrowave MeasurementsMicrowave OscillatorsMicrowave Semiconductor DevicesDiode Current-voltage CharacteristicsDiode ModelingElectrical Resistance MeasurementEquivalent Series ResistanceGaas OscillatorsImpatt DiodesSeries Resistance
A new method is given for determining the electrical series resistance of an IMPATT diode. The measurement is based on observation of the oscillation threshold bias current for a diode in a standard circuit. The method is applied to GaAs diodes near 40 GHz. The values obtained are used to quantitatively explain other performance characteristics of the diodes.
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