Switching and conducting performance of SiC-JFET and ESBT against MOSFET and IGBT

Abstract

Here the switching and conducting performance of a SiC-JFET, an Emitter-Switching Bipolar Transistor (ESBT) and conventional power semiconductors as MOSFET and IGBT with Si- and SiC-diode is presented. The variety of power semiconductors is growing and there is a need to get rules to select them for the application given. The structure and special characteristics of the new devices are explained. The switching and conducting behavior of the devices is measured and investigated. The test circuit and the measurement method are presented. Based on the measured waveforms the power losses are calculated. The results of the switching and conducting performance of these power semiconductors are discussed.