Generation and Propagation of Single Event Transients in 0.18-$\mu{\rm m}$ Fully Depleted SOI

Abstract

Single event transients were characterized experimentally in fast logic circuits fabricated in 0.18-mum FDSOI CMOS process using laser-probing techniques. We show that the transient pulse widens as it propagates; the widening is largely eliminated by the body contact. Good agreement is observed between pulsed-laser and heavy ion testing.