IEEE Photonics Technology Letters · 2011 · 12 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesSemiconductor Device MaterialsSemiconductor SurfacesWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsElectrical PropertiesElectrostatic DischargeEnduranceGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesGallium Nitride Power DevicesLeakageLight-emitting Diode Materials
The effect of growth pressure of underlying undoped GaN(u-GaN) layer on the electrical properties of GaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSS) is evaluated. The electrostatic discharge (ESD) endurance voltages could increase from 4000 to 7000 V when the growth pressure of u-GaN layers is increased from 100 to 500 torr, while the forward voltages and light output powers remain almost the same. Poor ESD endurance ability could be attributed to the underlying GaN layer grown under relative low pressure, which leads to significant surface pits. This could be further attributed to the imperfect coalescence of crystal planes above the convex sapphire patterns. The pits are associated with TDs behaving as a leakage path to degrade electrical performance.
9
Electrical effects of plasma damage in p-GaN
X. A. Cao, S. J. Pearton, A. P. Zhang et al. · Applied Physics Letters · 1999 · 203 citations
Jinn‐Kong Sheu, J.M. Tsai, Shih‐Chang Shei et al. · IEEE Electron Device Letters · 2001 · 128 citations