IEEE Transactions on Electron Devices · 1998 · 55 citations · 17 references
Natural SciencesElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesDetector TechnologyInfrared DetectorsInfrared InstrumentationPhotodetectorsSemiconductor DetectorsThin Film Thermal PropertiesDetector ArraysInfrared Detector ArraysLinear ArraysResponsivitySiliconThermal DetectorsThermal Infrared DetectorsThermal Properties
We have fabricated 63-element linear arrays of micromachined thermopile infrared detectors on silicon substrates. Each detector consists of a suspended silicon nitride membrane with 11 thermocouples of sputtered Bi-Te and Bi-Sb-Te films. At room temperature and under vacuum these detectors exhibit response times of 99 ms, zero frequency D* values of 1.4/spl times/ 10/sup 9/ cmHz/sup 1/2//W and responsivity values of 1100 V/W when viewing a 1000 K blackbody source. The only measured source of noise above 20 mHz is Johnson noise from the detector resistance. These results represent the best performance reported to date for an array of thermopile detectors. A test procedure is described that measures many of the relevant electrical, optical, and thermal properties of the detectors without specialized test structures.
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Thermoelectric infrared sensors by CMOS technology
R. Lenggenhager, H. Baltes, Jon Peer et al. · IEEE Electron Device Letters · 1992 · 81 citations