2002 · 16 citations · 8 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesDevice ModelingDevice SimulationElectric CircuitsElectronic Transport ModelingIntegrated Circuit DesignSimulation MethodsBoltzmann EquationsCircuit SimulationElectric Circuit ModelsField-effect Transistor SimulationJunction ModelingMosfet ModelingPhysics-based Device ModelingPower Device Simulation
The power BJT is modeled using the lumped-charge method using simplified forms of the Poisson's equation, the continuity equation and the Boltzmann relation. All important one-dimensional effects are included in the model. Only nine parameters are needed to completely specify the model except for junction capacitances and parasitic resistances. This model can be easily extended to make a BJT Darlington model.
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VBIC95: An improved vertical, IC bipolar transistor model
Colin C. McAndrew, J.A. Seitchik, Derek F. Bowers et al. · 2002 · 53 citations